FDD1600N10ALZD
Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Key Features
- RDS(on) = 124 mΩ (Typ.) @ VGS = 10 V, ID = 3.4 A
- RDS(on) = 175 mΩ (Typ.) @ VGS = 5.0 V, ID = 2.1 A
- Low Gate Charge (Typ. 2.78 nC)
- Low Crss (Typ. 2.04 pF)
- Fast Switching
- 100% Avalanche Tested
- Improved dv/dt Capability
Applications
- LED Monitor Backlight
