FDD1600N10ALZD mosfet equivalent, n-channel mosfet.
* RDS(on) = 124 mΩ (Typ.) @ VGS = 10 V, ID = 3.4 A
* RDS(on) = 175 mΩ (Typ.) @ VGS = 5.0 V, ID = 2.1 A
* Low Gate Charge (Typ. 2.78 nC)
* Low Crss (Typ. 2.
* LED Monitor Backlight
* LED TV Backlight
* LED Lighting
* Consumer Appliances, DC-DC converter (Step u.
This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
The NP diode is hyperfast rectifier with low forward v.
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