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FDD1600N10ALZD - N-Channel MOSFET

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

The NP diode is hyperfast rectifier with low forward voltage drop and excellent switching performance.

Key Features

  • RDS(on) = 124 mΩ (Typ. ) @ VGS = 10 V, ID = 3.4 A.
  • RDS(on) = 175 mΩ (Typ. ) @ VGS = 5.0 V, ID = 2.1 A.
  • Low Gate Charge (Typ. 2.78 nC).
  • Low Crss (Typ. 2.04 pF).
  • Fast Switching.
  • 100% Avalanche Tested.
  • Improved dv/dt Capability.
  • RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDD1600N10ALZD — BoostPak (N-Channel PowerTrench® MOSFET + Diode) November 2013 FDD1600N10ALZD BoostPak (N-Channel PowerTrench® MOSFET + Diode) 100 V, 6.8 A, 160 mΩ Features • RDS(on) = 124 mΩ (Typ.) @ VGS = 10 V, ID = 3.4 A • RDS(on) = 175 mΩ (Typ.) @ VGS = 5.0 V, ID = 2.1 A • Low Gate Charge (Typ. 2.78 nC) • Low Crss (Typ. 2.04 pF) • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capability • RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. The NP diode is hyperfast rectifier with low forward voltage drop and excellent switching performance.