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FDD1600N10ALZD N-Channel MOSFET

FDD1600N10ALZD Description

FDD1600N10ALZD * BoostPak (N-Channel PowerTrench® MOSFET + Diode) November 2013 FDD1600N10ALZD BoostPak (N-Channel PowerTrench® MOSFET + Diod.
This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance whil.

FDD1600N10ALZD Features

* RDS(on) = 124 mΩ (Typ. ) @ VGS = 10 V, ID = 3.4 A
* RDS(on) = 175 mΩ (Typ. ) @ VGS = 5.0 V, ID = 2.1 A
* Low Gate Charge (Typ. 2.78 nC)
* Low Crss (Typ. 2.04 pF)
* Fast Switching
* 100% Avalanche Tested
* Improved dv/dt Capability
* RoH

FDD1600N10ALZD Applications

* LED Monitor Backlight
* LED TV Backlight
* LED Lighting
* Consumer Appliances, DC-DC converter (Step up & Step down) 3 12 45 3 TO252-5L 1. Gate 2. Source 3. Drain / Anode 4. Cathode 5. Cathode 1 Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS VG

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N-Channel MOSFET Fairchild Semiconductor
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