FDD1600N10ALZD Datasheet | Fairchild Semiconductor

Features - RDS(on) = 124 mΩ (Typ.) @ VGS = 10 V, ID = 3.4 A - RDS(on) = 175 mΩ (Typ.) @ VGS = 5.0 V, ID = 2.1 A - Low Gate Charge (Typ. 2.78 n C) - Low Crss (Typ. 2.04 p F) - Fast Switching - 100% Avalanche Tested - Improved dv/dt Capability - Ro HS pliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s Power Trench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. The NP diode is hyperfast rectifier with low forward voltage drop and excellent switching performance. Applications - LED Monitor Backlight - LED TV Backlight - LED Lighting - Consumer Appliances, DC-DC converter (Step up & Step down) 12 45 3 TO252-5L 1. Gate 2. Source 3. Drain / Anode 4. Cathode 5. Cathode Maximum Ratings TC = 25o C unless otherwise noted. Symbol VDSS VGSS IDM EAS dv/dt IF IFM TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current - Continuous (TC = 25o C) - Continuous (TC = 100o C) - Pulsed (Note 1) Single Pulsed Avalanche Energy (Note 2) Peak Diode Recovery dv/dt Power Dissipation (TC = 25o...