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FDD1600N10ALZ - N-Channel MOSFET

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General Description

This N-Channel MOSFET is produced using Fairchld Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance and maintain superior switching performance.

Application • Consumer Appliances • LED TV and Monitor • Synchronous Rectification • Uninterruptible Power Supply • Micro Solar Inverter D G S D D-PAK G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted.

Symbol VDSS VGSS ID IDM EAS dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current - Continuous (TC = 25oC) - Continuous (TC = 100oC) - Pulsed (Note 1) Single Pulsed Avalanche Energy (Note 2) Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate Above 25oC (Note 3) Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds Thermal Characteristics Symbol RJC RJA Parameter Thermal Resistance, Junction to Case, Max.

Overview

FDD1600N10ALZ — N-Channel PowerTrench® MOSFET FDD1600N10ALZ N-Channel PowerTrench® MOSFET 100 V, 6.

Key Features

  • RDS(on) = 124 m (Typ. ) @ VGS = 10 V, ID = 3.4 A.
  • RDS(on) = 175 m (Typ. ) @ VGS = 5 V, ID = 2.1 A.
  • Low Gate Charge (Typ.2.78 nC).
  • Low Crss (Typ. 2.04 pF).
  • Fast Switching.
  • 100% Avalanche Tested.
  • Improved dv/dt Capability.
  • RoHS Compliant.

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