FDD10N20LZ
Features
- RDS(on) = 300 mΩ (Typ.) @ VGS = 10 V, ID = 3.8 A
- Low Gate Charge (Typ. 12 n C)
- Low Crss (Typ. 11 p F)
- 100% Avalanche Tested
- Improved dv/dt Capability
- ESD Improved Capability
- Ro HS pliant
Applications
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
November 2013
Description
Uni FETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
D D-PAK
MOSFET Maximum Ratings TC = 25o C unless otherwise noted.
Symbol VDSS VGSS
IDM EAS IAR EAR dv/dt
Parameter
Drain to Source Voltage
Gate to Source Voltage Drain Current Drain Current
- Continuous (TC = 25o C)
- Continuous...
