FDD107AN06LA0 Datasheet | Fairchild Semiconductor

January 2004 N-Channel Power Trench® MOSFET 60V, 10A, 107mΩ Features - r DS(ON) = 92mΩ (Typ.), VGS = 5V, ID = 10A - Qg(tot) = 4.2n C (Typ.), VGS = 5V - Low Miller Charge - Low QRR Body Diode - UIS Capability (Single Pulse and Repetitive Pulse) - Qualified to AEC Q101 Formerly developmental type 83524 Applications - Motor / Body Load Control - ABS Systems - Powertrain Management - Injection Systems - DC-DC converters and Off-line UPS - Distributed Power Architectures and VRMs - Primary Switch for 12V and 24V systems DRAIN (FLANGE) GATE SOURCE TO-252AA FDD SERIES MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25o C, VGS = 10V) Continuous (TC = 25o C, VGS = 5V) Continuous (TC = 100o C, VGS = 5V) Continuous (TA = 25o C, VGS = 5V, RθJA = 52o C/W) Pulsed EAS Single Pulse Avalanche Energy (Note 1) Power dissipation PD Derate above 25o...