Description | This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications • Synchronous Rectification for ATX / Server / Telecom PSU D D G S D-PAK (TO-252) G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol Parameter FDD050N03B VDS... |
Features |
• RDS(on) = 3.7 mΩ ( Typ.)@ VGS = 10 V, ID = 25 A • Fast Switching Speed • Low Gate Charge, QG = 33 nC( Typ.) • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advance PowerTrench® process that h... |
Datasheet | FDD050N03B Datasheet - 435.12KB |