FDD050N03B Key Features
- RDS(on) = 3.7 mΩ ( Typ.)@ VGS = 10 V, ID = 25 A
- Fast Switching Speed
- Low Gate Charge, QG = 33 nC( Typ.)
- High Performance Trench Technology for Extremely Low
- High Power and Current Handling Capability
- RoHS pliant
- Part: FDD050N03B
- Description: N-Channel PowerTrench MOSFET
- Manufacturer: Fairchild Semiconductor
- Size: 435.12 KB
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