FDD050N03B N-Channel PowerTrench MOSFET
• RDS(on) = 3.7 mΩ ( Typ.)@ VGS = 10 V, ID = 25 A
• Fast Switching Speed
• Low Gate Charge, QG = 33 nC( Typ.)
• High Performance Trench Technology for.
• Synchronous Rectification for ATX / Server / Telecom PSU D D G S D-PAK (TO-252) G S MOSFET Ma.
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