FDD050N03B datasheet, mosfet equivalent, Fairchild Semiconductor

Features and benefits

* RDS(on) = 3.7 mΩ ( Typ.)@ VGS = 10 V, ID = 25 A
* Fast Switching Speed
* Low Gate Charge, QG = 33 nC( Typ.)
* High Performance Trench Technology for Ext.

Application

* Synchronous Rectification for ATX / Server / Telecom PSU D D G S D-PAK (TO-252) G S MOSFET Maximum Ratings TC.

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications
* Synchronous Rectification .

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