FDC796N mosfet equivalent, 30v n-channel powertrench mosfet.
* 12.5 A, 30 V.
RDS(ON) = 9 mΩ @ VGS = 10 V RDS(ON) = 12 mΩ @ VGS = 4.5 V
* High performance trench technology for extremely low RDS(ON)
* Low gate charge.
* DC/DC converter
* Power management
* Load switch
Features
* 12.5 A, 30 V.
RDS(ON) = 9 mΩ @ VGS = 10.
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching s.
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