FDB8896 mosfet equivalent, n-channel mosfet.
* rDS(ON) = 5.7mΩ, VGS = 10V, ID = 35A
* rDS(ON) = 6.8mΩ, VGS = 4.5V, ID = 35A
* High performance trench technology for extremely low
rDS(ON)
* Low gate c.
* DC/DC converters
tm
Features
* rDS(ON) = 5.7mΩ, VGS = 10V, ID = 35A
* rDS(ON) = 6.8mΩ, VGS = 4.5V, ID = 3.
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