FDB8874 N-Channel MOSFET
• rDS(ON) = 4.7mΩ , VGS = 10V, ID = 40A
• rDS(ON) = 6.0mΩ , VGS = 4.5V, ID = 40A
• High performance trench technology for extremely low rDS(ON)
• Low .
• DC/DC converters • High power and current handling capability D GATE G SOURCE DRAIN (FLANGE) T.
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