FDB8874
Overview
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
- rDS(ON) = 4.7mΩ , VGS = 10V, ID = 40A
- rDS(ON) = 6.0mΩ , VGS = 4.5V, ID = 40A
- High performance trench technology for extremely low rDS(ON)
- Low gate charge
