FDB8453LZ datasheet, mosfet equivalent, Fairchild Semiconductor

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Features and benefits

* Max rDS(on) = 7.0mΩ at VGS = 10V, ID = 17.6A
* Max rDS(on) = 9.0mΩ at VGS = 4.5V, ID = 14.9A
* HBM ESD protection level of 7.6kV typical (note 4)
* Fast.

Application

* Inverter
* Power Supplies D D G S TO-263AB FDB Series G S MOSFET Maximum Ratings TC = 25°C unless otherwi.

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level. Applicati.

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