FDB6670AL
Description
This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
Key Features
- RDS(ON) = 0.0065 Ω @ VGS=10 V, RDS(ON) = 0.0085 Ω @ VGS= 4.5 V
- Critical DC electrical parameters specified at elevated temperature
- Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor
- High performance trench technology for extremely low RDS(ON)
- 175°C maximum junction temperature rating
