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FDB14N30 - N-Channel MOSFET

General Description

UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology.

This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength.

Key Features

  • RDS(on) = 290 m (Max. ) @ VGS = 10 V, ID = 7 A.
  • Low Gate Charge (Typ. 18 nC).
  • Low Crss (Typ.17 pF).
  • 100% Avalanche Tested.
  • Improved dv/dt Capability.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDB14N30 — N-Channel UniFETTM MOSFET FDB14N30 N-Channel UniFETTM MOSFET 300 V, 14 A, 290 m Features • RDS(on) = 290 m (Max.) @ VGS = 10 V, ID = 7 A • Low Gate Charge (Typ. 18 nC) • Low Crss (Typ.17 pF) • 100% Avalanche Tested • Improved dv/dt Capability Applications • Lighting • Uninterruptible Power Supply • AC-DC Power Supply D November 2013 Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.