FDB12N50F mosfet equivalent, n-channel mosfet.
* RDS(on) = 0.59Ω ( Typ.)@ VGS = 10V, ID = 6A
* Low gate charge ( Typ. 21nC)
* Low Crss ( Typ. 11pF)
* Fast switching
* 100% avalanche tested
* Im.
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switchi.
Image gallery
TAGS
Download (Size : 633.30KB)