FDB110N15A mosfet equivalent, mosfet.
* RDS(on) = 9.25 mΩ (Typ.) @ VGS = 10 V, ID = 92 A
* Fast Switching Speed
* Low Gate Charge
* High Performance Trench Technology for Extremely Low
RDS(on).
* Synchronous Rectification for ATX / Server / Telecom PSU
* Battery Protection Circuit
* Motor drives and U.
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Applications
* Synchronous Rectification f.
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