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FDAF62N28 - N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Key Features

  • 36A, 280V, RDS(on) = 0.051Ω @VGS = 10 V.
  • Low gate charge ( typical 77 nC).
  • Low Crss ( typical 83 pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability UniFET.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDAF62N28 280V N-Channel MOSFET October 2006 FDAF62N28 280V N-Channel MOSFET Features • 36A, 280V, RDS(on) = 0.051Ω @VGS = 10 V • Low gate charge ( typical 77 nC) • Low Crss ( typical 83 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability UniFET Description TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. D G G D S TO-3PF FDAF Series www.DataSheet4U.