FDA2712 Datasheet, Fairchild Semiconductor

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* RDS(on) = 29.2mΩ @VGS = 10 V, ID = 40A Fast switching speed Low gate charge High performance trench technology for extremely low RDS(o.

* PDP application D G G DS TO-3PN S MOSFET Maximum Ratings Symbol VDSS VGSS ID IDM EAS dv/dt PD TJ, TSTG TL Para.

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Applications
* PDP application .