FDA16N50-F109 datasheet, mosfet equivalent, Fairchild Semiconductor

Features and benefits

* RDS(on) = 380 m (Max.) @ VGS = 10, ID = 8.3 A
* Low Gate Charge (Typ. 32 nC)
* Low C rss (Typ. 20 pF)
* 100% Avalanche Tested Description UniFETTM MOS.

Application

* PDP V T
* Uninterruptible Power Supply D G G D S TO-3PN TC = 25oC unless otherwise noted. S Absolute Max.

Description

UniFETTM MOSFET is F airchild Semiconductor ’s high volt age MOSFET family based on planar stripe and D MOS technology. This MOSFET is tailored to reduce on-st ate resistance, and to provide be tter switching performance and higher avalanche energy s.

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