FCU5N60 mosfet equivalent, 600v n-channel mosfet.
* 650 V @ TJ = 150°C
* Typ. RDS(on) = 810 mΩ
* Ultra Low Gate Charge (Typ. Qg = 16 nC)
* Low Effective Output Capacitance (Typ. Coss(eff.) = 32 pF)
* .
such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
D
G S
D-PAK
GDS
I-PAK
.
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailor.
Image gallery
TAGS
Download (Size : 337.01KB)