• 650V @TJ = 150°C
• Typ. RDS(on) = 0.53Ω
• Ultra low gate charge (typ. Qg = 25nC)
• Low effective output capacitance (typ. Coss.eff = 60pF)
• 100% avalanche tested
TM
Description
SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced cha.