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FCPF20N60 - N-Channel MOSFET

Download the FCPF20N60 datasheet PDF. This datasheet also covers the FCP20N60 variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance.

Key Features

  • 650V @ TJ = 150°C.
  • Typ. RDS(on) = 150 mΩ.
  • Ultra Low Gate Charge (Typ. Qg = 75 nC ).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 165 pF ).
  • 100% Avalanche Tested.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FCP20N60-FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Fairchild (onsemi)

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FCP20N60 / FCPF20N60 — N-Channel SuperFET® MOSFET August 2014 FCP20N60 / FCPF20N60 N-Channel SuperFET® MOSFET 600 V, 20 A, 190 mΩ Features • 650V @ TJ = 150°C • Typ. RDS(on) = 150 mΩ • Ultra Low Gate Charge (Typ. Qg = 75 nC ) • Low Effective Output Capacitance (Typ. Coss(eff.) = 165 pF ) • 100% Avalanche Tested Applications • Solar Inverter • AC-DC Power Supply Description SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.