FCPF13N60NT mosfet equivalent, n-channel mosfet.
* RDS(on) = 0.244Ω ( Typ.) @ VGS = 10V, ID = 6.5A
* Ultra Low Gate Charge ( Typ.Qg = 30.4nC)
* Low Effective Output Capacitance
* 100% Avalanche Tested
D
G G D S
TO-220 FCP Series
GD S
TO-220F FCPF Series
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
S.
The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise proce.
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