* RDS(on) = 28.7 mΩ (Typ.) @ VGS = 10 V, ID = 38 A
* Ultra Low Gate Charge (Typ. Qg = 230 nC)
* Low Effective Output Capacitance (Typ. Coss(eff.) = 896 pF)

such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SupreMOS FRFET® MOSFET’s o.

The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise pro.

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