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FCH043N60 - MOSFET

Description

SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.

Features

  • 650 V @ TJ = 150°C.
  • Typ. RDS(on) = 37 mΩ.
  • Ultra Low Gate Charge (Typ. Qg = 163 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 730 pF).
  • 100% Avalanche Tested.
  • RoHS Compliant.

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FCH043N60 — N-Channel SuperFET® II MOSFET April 2014 FCH043N60 N-Channel SuperFET® II MOSFET 600 V, 75 A, 43 mΩ Features • 650 V @ TJ = 150°C • Typ. RDS(on) = 37 mΩ • Ultra Low Gate Charge (Typ. Qg = 163 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 730 pF) • 100% Avalanche Tested • RoHS Compliant Applications • Telecom / Sever Power Supplies • Industrial Power Supplies Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy.