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FCD600N60Z - N-Channel SuperFET II MOSFET

Description

SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.

Features

  • 650 V @ TJ = 150°C.
  • Typ. RDS(on) = 510 mΩ.
  • Ultra Low Gate Charge (Typ. Qg = 20 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 74 pF).
  • 100% Avalanche Tested.
  • ESD Improved Capacity.
  • RoHS Compliant.

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FCD600N60Z — N-Channel SuperFET® II MOSFET FCD600N60Z N-Channel SuperFET® II MOSFET 600 V, 7.4 A, 600 mΩ November 2013 Features • 650 V @ TJ = 150°C • Typ. RDS(on) = 510 mΩ • Ultra Low Gate Charge (Typ. Qg = 20 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 74 pF) • 100% Avalanche Tested • ESD Improved Capacity • RoHS Compliant Applications • LCD / LED / PDP TV and Monitor Lighting • Solar Inverter • AC-DC Power Supply Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.
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