FCB36N60N mosfet equivalent, n-channel mosfet.
* RDS(on) = 81 mΩ (Typ.)@ VGS = 10 V, ID = 18 A
* Ultra low gate charge (Typ. Qg = 86 nC)
* Low effective output capacitance (Typ. Coss.eff = 361 pF)
* 10.
such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
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* Solar .
The SupreMOS® MOSFET is Fairchild Semiconductor®’s nextgeneration of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiate it from the conventional MOSFETs. This advanced technology and precise process.
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