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FCB36N60N - N-Channel MOSFET

General Description

The SupreMOS® MOSFET is Fairchild Semiconductor®’s nextgeneration of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiate it from the conventional MOSFETs.

Key Features

  • RDS(on) = 81 mΩ (Typ. )@ VGS = 10 V, ID = 18 A.
  • Ultra low gate charge (Typ. Qg = 86 nC).
  • Low effective output capacitance (Typ. Coss. eff = 361 pF).
  • 100% avalanche tested.
  • RoHS compliant.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FCB36N60N N-Channel MOSFET March 2013 FCB36N60N N-Channel SupreMOS® MOSFET 600 V, 36 A, 90 mΩ Features • RDS(on) = 81 mΩ (Typ.)@ VGS = 10 V, ID = 18 A • Ultra low gate charge (Typ. Qg = 86 nC) • Low effective output capacitance (Typ. Coss.eff = 361 pF) • 100% avalanche tested • RoHS compliant Description The SupreMOS® MOSFET is Fairchild Semiconductor®’s nextgeneration of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiate it from the conventional MOSFETs. This advanced technology and precise process control provide lowest Rsp on-resistance, superior switching performance and ruggedness.