FCB36N60N
Description
The SupreMOS® MOSFET is Fairchild Semiconductor®’s nextgeneration of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiate it from the conventional MOSFETs.
Key Features
- RDS(on) = 81 mΩ (Typ.)@ VGS = 10 V, ID = 18 A
- Ultra low gate charge (Typ. Qg = 86 nC)
- Low effective output capacitance (Typ. Coss.eff = 361 pF)
- 100% avalanche tested
