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FCA35N60 - 600V N-Channel MOSFET

General Description

SuperFETTM is Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

Key Features

  • 650V @ TJ = 150°C.
  • Typ. RDS(on) = 0.079Ω.
  • Ultra low gate charge ( Typ. Qg = 139nC ).
  • Low effective output capacitance ( Typ. Coss. eff = 340pF ).
  • 100% avalanche tested SuperFETTM.

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FCA35N60 N-Channel MOSFET March 2009 FCA35N60 600V N-Channel MOSFET Features • 650V @ TJ = 150°C • Typ.RDS(on) = 0.079Ω • Ultra low gate charge ( Typ. Qg = 139nC ) • Low effective output capacitance ( Typ. Coss.eff = 340pF ) • 100% avalanche tested SuperFETTM Description SuperFETTM is Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy.