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FCA16N60N - N-Channel MOSFET

Description

The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies.

Features

  • RDS(on) = 0.17Ω ( Typ. )@ VGS = 10V, ID = 8A.
  • Ultra low gate charge ( Typ. Qg = 40.2nC).
  • Low effective output capacitance.
  • 100% avalanche tested.
  • RoHS compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FCA16N60N N-Channel MOSFET August 2009 TM SupreMOS FCA16N60N N-Channel MOSFET 600V, 16A, 0.170Ω Features • RDS(on) = 0.17Ω ( Typ.)@ VGS = 10V, ID = 8A • Ultra low gate charge ( Typ. Qg = 40.2nC) • Low effective output capacitance • 100% avalanche tested • RoHS compliant Description The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior switching performance and ruggedness. This SupreMOS MOSFET fits the industry’s AC-DC SMPS requirements for PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications.
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