FCA16N60N mosfet equivalent, n-channel mosfet.
* RDS(on) = 0.17Ω ( Typ.)@ VGS = 10V, ID = 8A
* Ultra low gate charge ( Typ. Qg = 40.2nC)
* Low effective output capacitance
* 100% avalanche tested
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G
G DS
TO-3PN FCA Series
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MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol VDSS VGSS ID IDM
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The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise proce.
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