F08H60S diode equivalent, hyperfast-ii diode.
* Hyperfast Recovery trr = 45 ns (@ IF = 8 A)
* Max Forward Voltage, VF = 2.6 V (@ TC = 25°C)
* 600 V Reverse Voltage and High Reliability
* Avalanche Ene.
* General Purpose
* Switching Mode Power Supply
* Free-Wheeling Diode for Motor Application
* Power Swit.
The FFPF08H60S is a hyperfast II diode with soft recovery characteristics. It has the half recovery time of ultrafast diodes and is silicon nitride passivated ionimplanted epitaxial planar construction. These devices are intended to be used as freewh.
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