Fairchild Semiconductor D45H11
This device is designed for power amplifier, regulator, and switching circuits where speed is important. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended.FEATURES
● Sourced from process 5Q● General-Purpose Switching Transistor
● Low Corrector-Emitter Saturation Voltage
● High-Fast Switching Speed December 2013
DESCRIPTION
Ordering Information Part Number D45H11 1 TO-220 Mark: D45H11 1. Base 2. Collector 3. Emitter Marking D45H11 Package TO-220 3L Packing Method RailABSOLUTE MAXIMUM RATINGS
Stresses exceeding the absolute maximum ratings may damage the device. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol VCEO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value -80 -10 -55 to +150 Unit V A °C © 2007 Fairchild Semiconductor Corporation D45H11 Rev. 1.2.0 1 D45H11 — PNP Power Amplifier Thermal Characteristics(1) Values are at TA = 25°C unless otherwise noted. Symbol PD RθJC RθJA Parameter Total Device Dissipation Derate Above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max.