Download CNY17F1M Datasheet PDF
Fairchild Semiconductor
CNY17F1M

Description

The CNY17XM, CNY17FXM, and MOC8106M devices consist of a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a dual in-line package.

Key Features

  • Closely Matched Current Transfer Ratio (CTR) Minimizes Unit-to-Unit Variation
  • Current Transfer Ratio In Select Groups
  • Very Low Coupled Capacitance Along With
  • Safety and Regulatory Approvals
  • DIN-EN/IEC60747-5-5, 850 V Peak Working

Applications

  • Power Supply Regulators