Download CNY17F1M Datasheet PDF
CNY17F1M datasheet preview
CNY17F1M page 2
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CNY17F1M page 3
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CNY17F1M Key Features

  • High BVCEO: 70 V Minimum (CNY17XM, CNY17FXM, MOC8106M)
  • Closely Matched Current Transfer Ratio (CTR) Minimizes Unit-to-Unit Variation
  • Current Transfer Ratio In Select Groups
  • Safety and Regulatory Approvals
  • UL1577, 4,170 VACRMS for 1 Minute
  • DIN-EN/IEC60747-5-5, 850 V Peak Working

Related Fairchild Datasheets

Part Number Description
CNY17F1 (CNY17F1 - CNY17F4) Phototransistor Optocouplers
CNY17F-1 6-PIN DIP OPTOCOUPLERS
CNY17F-2 6-PIN DIP OPTOCOUPLERS
CNY17F-3 6-PIN DIP OPTOCOUPLERS
CNY17F-4 6-PIN DIP OPTOCOUPLERS

CNY17F1M Description

The CNY17XM, CNY17FXM, and MOC8106M devices consist of a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a dual in-line package. Package Outlines Figure 1. Schematics CNY171M/2M/3M/4M ©2006 Fairchild Semiconductor Corporation CNY17XM, CNY17FXM, MOC8106M Rev.