CNY17F1M Datasheet | Fairchild Semiconductor

Features - High BVCEO: 70 V Minimum (CNY17XM, CNY17FXM, MOC8106M) - Closely Matched Current Transfer Ratio (CTR) Minimizes Unit-to-Unit Variation - Current Transfer Ratio In Select Groups - Very Low Coupled Capacitance Along With No Chip-to-Pin 6 Base Connection for Minimum Noise Susceptability (CNY17FXM, MOC8106M) - Safety and Regulatory Approvals: - UL1577, 4,170 VACRMS for 1 Minute - DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage Applications - Power Supply Regulators - Digital Logic Inputs - Microprocessor Inputs - Appliance Sensor Systems - Industrial Controls Description The CNY17XM, CNY17FXM, and MOC8106M devices consist of a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a dual in-line package. Package Outlines Figure 1. Package Outlines Schematics ANODE 1 6 NC ANODE 1 6 BASE CATHODE 2 5 COLLECTOR CATHODE 2 5 COLLECTOR NC 3 4 EMITTER NC 3 4 EMITTER CNY17F1M/2M/3M/4M MOC8106M Figure 2. Schematics CNY171M/2M/3M/4M ©2006 Fairchild Semiconductor Corporation CNY17XM, CNY17FXM, MOC8106M Rev. 1.1.2 .fairchildsemi. CNY17XM, CNY17FXM, MOC8106M - 6-Pin DIP High BVCEO Phototransistor...