BSS123W transistor equivalent, n-channel logic level enhancement mode field effect transistor.
* 0.17 A, 100 V, RDS(ON) = 6 Ω at VGS = 10 V RDS(ON) = 10 Ω at VGS = 4.5 V
* High Density Cell Design for Low RDS(ON)
* Rugged and Reliable
* Ultra Small .
such as small servo motor control, power MOSFET gate drivers, logic level transistor, high speed line drivers, power man.
This N-channel enhancement mode field effect transistor is produced using high cell density, trench MOSFET technology. This product minimizes on-state resistance while providing rugged, reliable and fast switching performance. This product is particu.
Image gallery
TAGS
Download (Size : 215.35KB)