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BCX70K - NPN Epitaxial Silicon Transistor

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BCX70K BCX70K General Purpose Transistor 3 2 1 SOT-23 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Storage Temperature 1. Base 2. Emitter 3. Collector Value 45 45 5 200 350 -55 ~ 150 Units V V V mA mW °C • Refer to KST3904 for graphs Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCEO BVEBO ICES IEBO hFE Parameter Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Test Condition IC=2.0mA, IB=0 IE=1.0µA, IC=0 VCE=32V, VBE=0 VEB=4V, IC=0 VCE=5V, IC=10µA VCE=5V, IC=2.
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