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Fairchild Semiconductor Electronic Components Datasheet

BCP55 Datasheet

NPN General Purpose Amplifier

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BCP55
C
SOT-223
E
C
B
NPN General Purpose Amplifier
This device is designed for general purpose medium power
amplifiers and switching circuits requiring collector currents
to 1.0 A. Sourced from Process 38. See BCP54 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
60
VCBO
Collector-Base Voltage
60
VEBO
Emitter-Base Voltage
5.0
IC Collector Current - Continuous
1.5
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJA Thermal Resistance, Junction to Ambient
Max
BCP55
1.5
12
83.3
Units
V
V
V
A
°C
Units
W
mW/°C
°C/W
© 1997 Fairchild Semiconductor Corporation


Fairchild Semiconductor Electronic Components Datasheet

BCP55 Datasheet

NPN General Purpose Amplifier

No Preview Available !

NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown
Voltage
IC = 10 mA, IB = 0
60
V
V(BR)CBO
Collector-Base Breakdown Voltage IC = 100 µA, IE = 0
60
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10 µA, IC = 0
5.0
V
ICBO Collector-Cutoff Current
IEBO Emitter-Cutoff Current
VCB = 30 V, IE = 0
VCB = 30 V, IE = 0, TA = 125°C
VEB = 5.0 V, IC = 0
100 nA
10 µA
10 µA
ON CHARACTERISTICS
hFE DC Current Gain
VCE(sat)
VBE(on)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
IC = 5.0 mA, VCE = 2.0 V
IC = 150 mA, VCE = 2.0 V
IC = 500 mA, VCE = 2.0 V
IC = 500 mA, IB = 50 mA
IC = 500 mA, VCE = 2.0 V
25
40 250
25
0.5
1.0
V
V


Part Number BCP55
Description NPN General Purpose Amplifier
Maker Fairchild Semiconductor
Total Page 6 Pages
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