Datasheet4U Logo Datasheet4U.com

BC309 - PNP EPITAXIAL SILICON TRANSISTOR

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BC307/308/309 BC307/308/309 Switching and Amplifier Applications • Low Noise: BC309 PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter VCES Collector-Emitter Voltage : BC307 : BC308/309 VCEO Collector-Emitter Voltage : BC307 : BC308/309 VEBO IC PC TJ TSTG Emitter-Base Voltage Collector Current (DC) Collector Power Dissipation Junction Temperature Storage Temperature 1 TO-92 1. Collector 2. Base 3. Emitter Value -50 -30 -45 -25 -5 -100 500 150 -55 ~ 150 Units V V V V V mA mW °C °C ©2002 Fairchild Semiconductor Corporation Rev.