* Max rDS(on) = 7.8mΩ, VGS = -10V, ID = -14.5A
* Max rDS(on) = 12mΩ, VGS = -4.5V, ID = -12A
* Extended VGS range (-25V) for battery applications
* HBM ESD.

common in Notebook Computers and Portable Battery Packs. Features
* Max rDS(on) = 7.8mΩ, VGS = -10V, ID = -14.5A

This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications com.

6670AL

6679GH

66004

66005

66012

66013

66015

66024

6604

66056

66058

66079

66088

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