4N29M Datasheet | Fairchild Semiconductor

4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M - 6-Pin DIP General Purpose Photodarlington Optocoupler December 2014 4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M 6-Pin DIP General Purpose Photodarlington Optocoupler Features - High Sensitivity to Low Input Drive Current - Meets or Exceeds All JEDEC Registered Specifications - Safety and Regulatory Approvals: - UL1577, 4,170 VACRMS for 1 Minute - DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage Description The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M, and TIL113M have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. Applications - Low Power Logic Circuits - Telemunications Equipment - Portable Electronics - Solid State Relays - Interfacing Coupling Systems of Different Potentials and Impedances Schematic ANODE 1 CATHODE 2 N/C 3 6 BASE 5 COLLECTOR 4 EMITTER Figure 1. Schematic 6 6 1 1 6 1 Figure 2. Package Outlines ©2007 Fairchild Semiconductor Corporation 4NXXM, H11B1M, TIL113M Rev....