4435BZ fds4435bz equivalent, fds4435bz.
* Max rDS(on) = 20mΩ at VGS = -10V, ID = -8.8A
* Max rDS(on) = 35mΩ at VGS = -4.5V, ID = -6.7A
* Extended VGSS range (-25V) for battery applications
* HBM.
* HBM ESD protection level of ±3.8KV typical (note 3)
* High performance trench technology for extremely low rDS.
This P-Channel MOSFET is produced
®
using
Fairchild
Semiconductor’s advanced PowerTrench
process that has
been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applicatio.
Image gallery
TAGS
Download (Size : 372.15KB)