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4435 - P-Channel MOSFET

General Description

This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process.

25V).

Power management Load switch

Key Features

  • 8.8 A,.
  • 30 V RDS(ON) = 20 mΩ @ VGS =.
  • 10 V RDS(ON) = 35 mΩ @ VGS =.
  • 4.5 V.
  • Low gate charge (17nC typical).
  • Fast switching speed.
  • High performance trench technology for extremely low RDS(ON).
  • High power and current handling capability DD DD DD DD SO-8 Pin 1SO-8 SS SS SS GG Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS V GSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain.

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Other Datasheets by Fairchild (now onsemi)

Part Number Description
4435BZ FDS4435BZ

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDS4435 October 2001 FDS4435 30V P-Channel PowerTrench® MOSFET General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). Applications • Power management • Load switch • Battery protection Features • –8.8 A, –30 V RDS(ON) = 20 mΩ @ VGS = –10 V RDS(ON) = 35 mΩ @ VGS = –4.