4435
Description
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process.
Key Features
- 8.8 A, -30 V RDS(ON) = 20 mΩ @ VGS = -10 V RDS(ON) = 35 mΩ @ VGS = -4.5 V
- Low gate charge (17nC typical)
- Fast switching speed
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability DD DD DD DD SO-8 Pin 1SO-8 SS SS SS GG
Representative 4435 image (package may vary by manufacturer)
