* 40 A, 250 V, RDS(on) = 70 mΩ (Max.) @ VGS = 10 V, ID = 20 A
* Low Gate Charge ( Typ. 85nC)
* Low Crss ( Typ. 70pF)
* 100% Avalanche Tested D G G D S .

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superio.

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