* 38.4 A, 300 V, RDS(on) = 85 mΩ (Max.) @ VGS = 10 V, ID = 19.2 A
* Low Gate Charge (Typ. 90 nC)
* Low Crss (Typ. 70 pF)
* 100% Avalanche Tested
* RoH.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.

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