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2N7051
2N7051
NPN Darlington Transistor
• This device designed for applications requiring extremely high gain at collector currents to 1.0A and high breakdown voltage. • Sourced from Process 06. • See 2N7052 for Characteristics. TO-92
1
1. Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings* TA=25°C unless otherwise noted
Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Storage Temperature Ratings 100 100 12 1.5 -55 ~ 150 Units V V V A °C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These rtings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits.
2N7051 Datasheet
