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2N5771 / MMBT5771
Discrete POWER & Signal Technologies
2N5771
MMBT5771
C
E C BE
TO-92 SOT-23
Mark: 3R
B
PNP Switching Transistor
This device is designed for very high speed saturate switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
15 15 4.5 200 -55 to +150
Units
V V V mA °C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C.
2N5771 Datasheet
