16N60 Key Features
- 650V @TJ = 150°C
- Typ. Rds(on) = 0.22Ω
- Ultra low gate charge (typ. Qg=55nC)
- Low effective output capacitance (typ. Coss.eff=110pF)
- 100% avalanche tested
- RoHS pliant
| Manufacturer | Part Number | Description |
|---|---|---|
Nell Power Semiconductor |
16N60 | N-Channel Power MOSFET |
IXYS |
16N60 | IXSA16N60 |
| Xirun Xirun |
16N60 | 16A N-Channel Power MOSFET |
Unisonic Technologies |
16N60-ML | N-CHANNEL POWER MOSFET |
| Xirun Xirun |
16N60F | 16A N-Channel Power MOSFET |