NDS8839H mosfet equivalent, complementary mosfet.
N-Channel 5.7A, 30V, RDS(ON)=0.045Ω @ VGS=10V. P-Channel -4.0A, -30V, RDS(ON)=0.09Ω @ VGS=-10V. High density cell design or extremely low RDS(ON). High power and current .
or CMOS applications when both gates are connected together.
Features
N-Channel 5.7A, 30V, RDS(ON)=0.045Ω @ VGS=10V. P-.
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