NDP610B Datasheet | Fairchild Semiconductor

Description These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and mutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. Features 26 and 24A, 100V. RDS(ON) = 0.065 and 0.080Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design (3 million/in²) for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications. Absolute Maximum Ratings Symbol Parameter VDSS VDGR VGSS ID PD Drain-Source Voltage Drain-Gate Voltage (RGS < 1 MΩ) Gate-Source Voltage - Continuous - Nonrepetitive (t P < 50 µs) Drain Current - Continuous - Pulsed Total Power Dissipation @ TC = 25°C Derate above 25°C TJ,TSTG TL TC = 25°C unless otherwise noted NDP610A NDP610AE NDB610A NDB610AE 100 100 ±20 ±40 26 104 100 0.67 NDP610B NDP610BE NDB610B NDB610BE Units V V V V 24 96 A A W W/°C °C °C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds -65 to 175 275 © 1997 Fairchild Semiconductor Corporation NDP610.SAM Electrical Characteristics (T Symbol EAS IAR Parameter Single Pulse Drain-Source Avalanche Energy = 25°C unless otherwise noted) Conditions VDD = 25 V, ID = 26 A Type NDP610AE NDP610BE NDB610AE NDB610BE Min Typ Max 250...