Description
SuperSOTTM-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
Features
- -5.1 A, -30 V. RDS(ON) = 0.032 Ω @ VGS = -10 V RDS(ON) = 0.052 Ω @ VGS = -4.5V. Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. ____________________________________________________________________________________________
5 6 7 8
4 3 2 1
Absolute Maximum Ratings
Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate.
NDH854P_FairchildSemiconductor.pdf
