NDH832P - P-Channel MOSFET

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Fairchild

Part number	NDH832P
Manufacturer	Fairchild
File Size	82.38 KB
Description	P-Channel MOSFET
Datasheet	NDH832P Datasheet
Additional preview pages of the NDH832P datasheet.

These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

-4.2A, -20V. RDS(ON) = 0.06Ω @ VGS = -4.5V RDS(ON) = 0.08Ω @ VGS = -2.7V. High density cell design for extremely low RDS(ON). Enhanced SuperSOTTM-8 small outline surface mount package with high power and current handling capability. ___________________________________________________________________________________________ 5 6 7 8 4 3 2 1 Absolute Maximum Ratings Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed PD T A = 25°C unless o.

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Published: May 12, 2005 |