NDB708BE - N-Channel MOSFET

Fairchild

Datasheet Details

Part number	NDB708BE
Manufacturer	Fairchild
File Size	74.91 KB
Description	N-Channel MOSFET
Datasheet	NDB708BE_FairchildSemiconductor.pdf

These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

60 and 54A, 80V. RDS(ON) = 0.022 and 0.025Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design (3 million/in²) for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount.

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Published: May 12, 2005 |