MPSA12
Discrete POWER & Signal Technologies
TO-92
NPN Darlington Transistor
This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics.
Absolute Maximum Ratings-
Symbol
VCES VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current
- Continuous
TA = 25°C unless otherwise noted
Parameter
Value
20 20 10 1.2 -55 to +150
Units
V V V A °C
Operating and Storage Junction Temperature Range
- These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RθJC RθJA
TA = 25°C unless otherwise noted
Characteristic
Total Device...
