IRFS830B Key Features
- 4.5A, 500V, RDS(on) = 1.5Ω @VGS = 10 V Low gate charge ( typical 27 nC) Low Crss ( typical 17 pF) Fast switching 100% av
| Manufacturer | Part Number | Description |
|---|---|---|
LZG |
IRFS830 | N-CHANNEL MOSFET |
Taitron Components |
IRFS830 | N-Channel Power MOSFET |
| IRFS830A | N-Channel MOSFET Transistor | |
Samsung Semiconductor |
IRFS830A | Power MOSFET |