IRFS830B Datasheet | Fairchild Semiconductor

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge. Features - - - - - - 4.5A, 500V, RDS(on) = 1.5Ω @VGS = 10 V Low gate charge ( typical 27 n C) Low Crss ( typical 17 p F) Fast switching 100% avalanche tested Improved dv/dt capability G G DS TO-220 IRF Series GD S TO-220F IRFS Series Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) IRF830B 500 4.5 2.9 18 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) IRFS830 4.5 - 2.9 - 18 - 270 4.5 7.3 5.5 Units V A A A V m J A m J V/ns W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 73 0.58 -55 to +150 300 38 0.3 - Drain current limited by maximum junction temperature Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case Max. Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient Max. IRF830B 1.71 0.5 62.5 IRFS830B 3.31 -62.5 Units °C/W °C/W °C/W ©2001 Fairchild Semiconductor Corporation Rev. A, November 2001 IRF830B/IRFS830B Electrical Characteristics...