IRFS830B Datasheet 500V N-Channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: IRF830B/IRFS830B November 2001 IRF830B/IRFS830B 500V N-Channel.

IRFS830B 500v n-channel mosfet by Fairchild (now onsemi) - Datasheet Preview

Datasheet Details

Part number	IRFS830B
Manufacturer	Fairchild (now onsemi)
File Size	888.88 KB
Description	500V N-Channel MOSFET
Download	IRFS830B Download (PDF)

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge.

Key Features

4.5A, 500V, RDS(on) = 1.5Ω @VGS = 10 V Low gate charge ( typical 27 nC) Low Crss ( typical 17 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 IRF Series GD S TO-220F IRFS Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain.

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