IRFS710B - 400V N-Channel MOSFET

Fairchild (now onsemi)

Datasheet Details

Part number	IRFS710B
Manufacturer	Fairchild (now onsemi)
File Size	859.16 KB
Description	400V N-Channel MOSFET
Datasheet	IRFS710B Datasheet

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge.

Overview

IRF710B/IRFS710B November 2001 IRF710B/IRFS710B 400V N-Channel.

Key Features

2.0A, 400V, RDS(on) = 3.4Ω @VGS = 10 V Low gate charge ( typical 7.7 nC) Low Crss ( typical 6.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 IRF Series GD S TO-220F IRFS Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Dra.

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